publication date : jul.2011 1 < silicon rf power module s > ra30h3340 m rohs compliance , 330 - 400 mhz 30 w 12.5v , 3 stage amp. for mobile radio description the ra 30h3340 m is a 30 - watt rf mosfet amplifier module for 12.5 - volt m obile radios that operate in the 330 - to 400 - mhz range. the battery can be connected directly to the drain of the enhancement - mode mosfet transistors. without the gate voltage (v gg =0v), only a small leakage current flows into the drain and the rf input signal attenuates up to 60 db. the output power and drain curr ent increase as the gate voltage increases. with a gate voltage around 4.0 v (minimum), output power and drain current increases substantially. the nominal output power becomes available at 4.5v (typical) and 5v (maximum). at v gg =5v, the typical gate curre nt is 1 ma. this module is designed for non - linear fm modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. features ? enhancement - mode mo sfet transistors (i dd ? 0 @ v dd =12.5v, v gg =0v) ? p out >30w, ? t >40% @ v dd =12.5v, v gg =5v, p in =50mw ? broadband frequency range: 33 0 - 40 0mhz ? low - power control current i gg =1ma (typ) at v gg =5v ? 66 x 21 x 9.8 mm ? linear operation is possible by setting the qui escent drain current with the gate voltage and controlling the output power with the input power rohs compliance ? ra 30h3340 m - 101 is a rohs complian t products. ? rohs compliance is indicate by the letter ?g? after the lot marking . ? this product include the lead in the glass of electronic parts and the lead in electronic ceramic parts. however, it is applicable to the following exceptions of rohs directions. 1.lead in the g lass of a cathode - ray tube, electronic parts, and fluorescent tubes. 2.lead in elec tronic c eramic parts. ordering information: order number supply form ra30h 3340 m - 1 01 antistatic tray, 10 modules/tray 1 rf input (p in ) 2 gate voltage (v gg ), power control 3 drain voltage (v dd ), battery 4 rf output (p out ) 5 rf ground (case) block diagram 2 4 1 5 3 package code: h2s
< silicon rf power module s > ra30 h3340m rohs compliance , 330 - 400 mhz 30 w 12.5v , 3 stage amp. for mobile radio publication date : jul.2011 2 maximum ratings ( t case =+25 c , unless otherwise specified ) symbol parameter conditions rating unit v dd drain voltage v gg <5 v 17 v v gg gate voltage v dd <12.5 v, p in =0mw 6 v p in input power 100 mw p out output power 45 w t case(op) operation case temperature range f= 330 - 400 mhz, z g =z l =50 ? - 30 to + 110 c t stg storage temperature range - 40 to +110 c the above parameters are independe ntly guaranteed. electrical characteristics ( t case =+25 c , z g =z l =50 ? , unless otherwise specified ) symbol parameter conditions min typ max unit f frequency range 330 - 400 mhz p out output power 30 - - w ? t total efficiency 4 0 - - % 2f o 2 nd harmonic - - - 25 dbc ? in input vswr - - 3:1 ? i gg gate current v dd = 12.5 v, v gg = 5 v, p in = 5 0mw - 1 - ma ? stability v dd = 10 .0 - 15.2 v , p in =25 - 70mw, p o ut <40w (v gg c ontrol) , load vswr =3 :1 no parasitic oscillation ? ? load vswr tolerance v dd = 15 .2v, p in = 5 0mw, p out = 30 w (v gg c ontrol), l oad vswr =20:1 no degradation or destroy ? all parameters, conditions, ratings, and limits are subject to change without notice.
< silicon rf power module s > ra30 h3340m rohs compliance , 330 - 400 mhz 30 w 12.5v , 3 stage amp. for mobile radio publication date : jul.2011 3 typical performance ( t case =+25c, z g =z l =50 ? , unless otherwise specified ) output power, total efficiency, output power and total efficiency and input vswr versus frequency versus input power 0 10 20 30 40 50 60 320 330 340 350 360 370 380 390 400 410 frequency f(mhz) o u t p u t p o w e r p o u t ( w ) i n p u t v s w r i n 0 20 40 60 80 100 120 t o t a l e f f i c i e n c y t ( % ) v dd =12.5v, v gg =5v, p in =50mw p out in t 30 35 40 45 50 -10 -5 0 5 10 15 20 input power pin(dbm) o u t p u t p o w e r p o u t ( d b m ) 0 20 40 60 80 100 t o t a l e f f i c i e n c y t ( % ) pout t f ==330mhz, vdd=12.5v , vgg=5v output power and efficiency output power and efficiency output power and efficiency output power and efficiency output power and efficiency versus gate voltage output power and efficiency versus gate voltage versus input power versus input power versus drain voltage versus gate voltage 0 10 20 30 40 50 60 70 0 2 4 6 8 10 12 14 16 18 drain supply voltage v dd (v) o u t p u t p o w e r p o u t ( w ) 0 20 40 60 80 100 120 140 t o t a l e f f i c i e n c y t ( % ) f =330/365/400mhz, v gg =5v, p in =50mw p out t : 330mhz : 365mhz - - - - - :400mhz 0 10 20 30 40 50 60 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 gate voltage v gg (v) o u t p u t p o w e r p o u t ( w ) 0 20 40 60 80 100 120 t o t l e f f i c i e n c y t ( % ) f =330mhz, v dd =12.5v, p in =50mw p out t 0 10 20 30 40 50 60 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 gate voltage v gg (v) o u t p u t p o w e r p o u t ( w ) 0 20 40 60 80 100 120 t o t a l e f f i c i e n c y t ( % ) f =365mhz v dd =12.5v, p in =50mw p out eta 0 10 20 30 40 50 60 2 2.5 3 3.5 4 4.5 5 5.5 6 gate voltage v gg (v) o u t p u t p o w e r p o u t ( w ) 0 20 40 60 80 100 120 t o t a l e f f i c i e n c y t ( % ) f =400mhz, v dd =12.5v, p in =50mw p out t 30 35 40 45 50 -10 -5 0 5 10 15 20 input power pin(dbm) o u t p u t p o w e r p o u t ( d b m ) 0 20 40 60 80 100 t o t a l e f f i c i e n c y t ( % ) p out t f =365mhz, vdd=12.5v , vgg=5v 30 35 40 45 50 -10 -5 0 5 10 15 20 input power pin(dbm) o u t p u t p o w e r p o u t ( d b m ) 0 20 40 60 80 100 t o t a l e f f i c i e n c y t ( % ) pout t f=400mhz, vdd=12.5v, vgg=5v
< silicon rf power module s > ra30 h3340m rohs compliance , 330 - 400 mhz 30 w 12.5v , 3 stage amp. for mobile radio publication date : jul.2011 4 outline drawing (mm) 12. 0 1 16.5 1 43.5 1 55.5 1 66.0 0.5 60.0 0.5 51.5 0.5 3.0 0.3 7.25 0.8 1 4 . 0 1 2 1 . 0 0 . 5 9 . 5 0 . 5 2 . 0 0 . 5 2 - r2 0.5 1 7 . 0 0 . 5 ?0.45 0.15 4 . 0 0 . 3 5 1 2 3 4 3 . 1 + 0 . 6 / - 0 . 4 7 . 5 0 . 5 2 . 3 0 . 3 ( 9 . 8 8 ) (50.4) 0 . 0 9 0 . 0 2 1 rf i nput (p in ) 2 gate voltage (v gg ) 3 drain voltage (v dd ) 4 rf o utput (p out ) 5 rf g round (case)
< silicon rf power module s > ra30 h3340m rohs compliance , 330 - 400 mhz 30 w 12.5v , 3 stage amp. for mobile radio publication date : jul.2011 5 test block diagram 1 rf i nput (p in ) 2 gate voltage (v gg ) 3 drain voltage (v dd ) 4 rf o utput (p out ) 5 rf g round (case) equivalent circuit c1, c2 : 4700pf, 22uf in parallel directional coupler attenuator power meter spectrum analyzer signal generator attenuator pre - amplifier power meter directional coupler dut 5 4 3 2 1 z g =50 ? z l =50 ? c1 c2 - + dc power supply v gg + - dc power supply v dd attenuator 1 5 2 3 4
< silicon rf power module s > ra30 h3340m rohs compliance , 330 - 400 mhz 30 w 12.5v , 3 stage amp. for mobile radio publication date : jul.2011 6 recommendation s and application information: construction: this module consists of an alumina substrate soldered onto a copper flange. for mechanical protection, a plastic cap is attached with silicone. the mosfet transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. wire leads soldered onto the alumina substrate provide the dc and rf connection. following condition s must be avoided: a) bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes) b) mechanical stress on the w ire leads (for example, by first soldering then driving screws or by thermal expansion) c) d efluxing so lvents reacting with the resin coating on the mosfet chips (for example, trichlor o ethylene) d ) esd, surge, overvoltage in combination with load vswr, and oscillation esd: this mosfet module is sensitive to esd voltages down to 1000v. appropriate esd precau tions are required. mounting: heat sink flatness must be less than 50 m (a heat sink that is not flat or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screw s or later when thermal expansion forces are added). a thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature difference to the hea t sink. the module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. m3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf - cm . soldering and defluxing: this module is designed for manual sol dering. the leads must be soldered after the module is screwed onto the heat sink. the temperature of the lead (terminal) soldering should be lower than 350c and shorter than 3 second . ethyl alcohol is recommend for removing flux. trichlor o ethylene solven ts must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). thermal design of the heat sink: at p out =30w, v dd =12.5v and p in =50mw each stage transistor operating conditions are : stage p in (w) p out (w) r th(ch - case) (c/w) i dd @ ? t =40% (a) v dd (v) 1 st 0.05 1.5 29.0 0. 18 2 nd 1.5 9.0 2.4 1. 6 0 3 rd 9.0 30.0 1.2 4.20 12.5 the channel temperatures of each stage transistor t ch = t case + (v dd x i dd - p out + p in ) x r th(ch - case) are: t ch1 = t case + (12.5v x 0. 18 a - 1.5w + 0.05w) x 29 .0c/w = t case + 23.2 c t ch2 = t case + (12.5v x 1. 6 0a - 9.0w + 1.50w) x 2.4c/w = t case + 30 .0 c t ch3 = t case + (12.5v x 4.20a - 30.0w + 9.0w) x 1.2c/w = t case + 37.8 c for long term reliability the module case temperature t case is better kept below 90c. for an ambient temperature t air =60c and p out =30w the required thermal resistance r th (case - air) = ( t case - t air ) / ( (p out / ? t ) - p out + p in ) of the heat sink, including the contact resistance, is: r th(case - air) = (90 c - 60c) / (30w/40% ? 30w + 0.05w) = 0.67 c/w when mounting the module with the thermal resistance of 0.67 c/w, the channel temperature of each stage transistor is: t ch1 = t air + 53.2 c t ch2 = t air + 60 .0 c t ch3 = t air + 67.8 c 175c maximum rating for the channel temperature ensures application under derated conditions.
< silicon rf power module s > ra30 h3340m rohs compliance , 330 - 400 mhz 30 w 12.5v , 3 stage amp. for mobile radio publication date : jul.2011 7 output power control: depending on linearity following 2 methods are recommended to control the output power: a) non - linear fm modulation: by gate voltage v gg . when the gate volt age is close to zero, the rf input signal is attenuated up to 60db and only a small leakage current is flowing from the battery into the drain. around v gg =3.5v the output power and drain current increases strongly. around v gg =4.5v, latest at v gg =5v, the no minal output power becomes available. b) linear am modulation: by rf input power p in . the gate voltage is used to set the drain quiescent current for the required linearity. oscillation: to test rf characteristic this module is put on a fixture with 2 bia s decoupling capacitors each on gate and drain, a 4.700pf chip capacitor, located close to the module, and a 22f electrolytic capacitor. when an amplifier circuit around this module shows oscillation following may be checked: a) do the bias decoupling cap acitors have a low inductance pass to the case of the module ? b) is the load impedance z l =50 ? ? c) is the source impedance z g =50 ? ? a ttention: 1.high temperature; this product might have a heat generation while operation,please take notice that have a po ssibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near the product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequenc y power; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3. before use; before use the product,pleas e design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precaution for the use of mitsubishi silicon rf power amplifier devices: 1. the specifications of mention are not guarantee values in this data sheet. p lease confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specification sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) and rd s eries products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products are highly reliable for their designed purpose, they are n ot manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements . in the application, which is base station applications and fixed station ap plications that operate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability repo rt which is described about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3.ra series products use mosfet semiconductor techno logy. the y are sensitive to esd voltage therefore a ppropriate esd precautions are required. 4.in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case temperature for ra series products lower than 60deg/c under standard conditions , and less than 90deg/c under extreme conditions . 5.ra series products are designed to operate in to a nominal load impedance of 50 ohm s . under the condition of operating into a severe high load vswr approaching an open or short, an over load condition could occur. in the worst case there is risk for burn out of the transistors and burning of other pa rts including the substrate in the module. 6.the formal specification in cludes a guarantee against parasitic oscillation under a specified maximum load mismatch condition . the inspection for parasitic oscillation is performed on a sample basis on our manuf acturing line . it is recommended that verification of no parasitic oscillation be performed at the completed equipment level also . 7.for specific precaution s regarding assembly of these products into the equipment , please refer to the supplementary item s i n the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s original form. 9.for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10. please refer to the additional precaution s in the formal specification sheet.
< silicon rf power module s > ra30 h3340m rohs compliance , 330 - 400 mhz 30 w 12.5v , 3 stage amp. for mobile radio publication date : jul.2011 8 ? 2011 mitsubishi electric corporation . all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility tha t trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference t o assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electri c corporat ion or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party?s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application example s contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these material s, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized m itsubishi semiconductor product distributor for the latest pro duct information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (http: //www. m itsubishi e lectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from th e information contained herein. ? mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or syst em that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any spe cific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any divers ion or re - export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
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